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Dernière mise à jour : mercredi 10 avril 2013, par
This table summarises the main characteristics of Mimosa prototypes (and also Successors from the SUCIMA project). It includes year fabrication, process, epitaxial layer thickness, pitch, number of metal layers, number of pixels, and particularities attached to each chips.
List of all chips (Excel file)
Chip (images) | Year | Process (µm) | Epi.(µm) | Pitch (µm) | Metal | Pixels | Peculiar | Doc. |
---|---|---|---|---|---|---|---|---|
M1 (1) | 1999 | AMS 0.6 | 14 | 20 | 3M | 16k | thick epitaxy | |
M2 (1) | 2000 | MIETEC 0.35 | 4.2 | 20 | 5M | 16k | thin epitaxy | |
M3 (1) | 2001 | IBM 0.25 | 2 | 8 | 3M | 32k | deep sub-µm | (1) |
M4 (1) | 2001 | AMS 0.35 | no | 20 | 3M | 16k | low dop. Substrate | |
M5 (1) (2) (3) (4) (5) | 2001 | AMS 0.6 | 14 | 17 | 3M | 1M | real scale 1M pixels | (1)(2) |
M6 (1) | 2002 | AMIS 0.35 | 4.2 | 28 | 5M | 4k | fast col. // r.o. and integrated spars. | (1) (2) |
M7 (1) | 2003 | AMS 0.35 | no | 25 | 4M | 1k | fast col. // r.o. + integ. spars. (photoFET) | (1) |
M8 (1) (2) | 2003 | TSMC 0.25 | ~8 | 25 | 5M | 4k | fast col. // r.o. and integrated spars. | (1) (2) (pos) |
M9 (1) (2) (3) | 2004 | AMS 0.35 opto | ~14 | 20/30/40 | 4M | 7k | tests diodes/pitch/leakage current | (1) (2) |
M9 no epi | 2004 | AMS 0.35 opto | no | 20/30/40 | 4M | 7k | tests diodes/pitch/leakage current | |
M10 Star 1 (1) (2) | 2004 | TSMC 0.25 | ~8 | 30 | 3M | 16k | 1st proto. for STAR vtx det. upgrade | manual |
M11 (1) (2) | 2005 | AMS 0.35 opto | ~14 | 30 | 3M | 7k | rad.tol. struct. | (1) |
M12 Mosaic 1 (1) | 2005 | AMS 0.35 hires | no | 35 | 4M | 0.6k | multi-memory pixels (FAPS) | (1) |
M13 Mosaic 2 (1) | 2005 | AMS 0.35 hires | no | 20 | 4M | 1.4k | fast col. // r.o. | |
M14 Star 2 (1) (2) (3) (4) (5) (6) (7) (8) (9) (10) | 2005 | AMS 0.35 opto | ~14 | 30 | 4M | 16k | final proto. STAR vtx det. upgrade | manual |
M15 (1) (2) (3) | 2005 | AMS 0.35 opto | ~14 | 20/30 | 4M | 7k | multi-purpose tracker-imager | (1) |
M16 (1) (2) | 2006 | AMS 0.35 opto | ~14&20 | 25 | 4M | 4k | M8 translation in AMS opto | (1) (2) |
M17 Mtel (1) (2) (3) | 2006 | AMS 0.35 opto | ~14&20 | 30 | 4M | 65k | Eudet telescope demonstrator | manual |
M18 Mimager.1 (1) | 2006 | AMS 0.35 opto | ~14&20 | ~10 | 4M | 262k | imager, high resolution | (1) |
M18 AHR (1) | 2010 | AMS HiRes 0.35 opto | ~10/15/20 | ~10 | 4M | 262k | imager, high resolution | (1) |
M19 Mimager.2 (1) | 2006 | AMS 0.35 opto | ~14&20 | ~12 | 4M | 80k | imager, charge spreading suppression | |
M20 Star 3 (1) | 2006-08 | AMS 0.35 opto | ~14&20 | 30 | 4M | 204k | STAR vtx det. upgrade | manual |
M21 (1) (1) | 2006 | STM 0.25 biCMOS | no | 20/10 | 4M | 24.5k + 6k | process exploration | |
M22 (1) (2) (3 mi22ter) | 2007 | AMS 0.35 opto | 14 | 18.4 | 4M | 73k digital + 4,6k analog | proto numerique EUDET | (mi22)(mi22bis)(mi22ter) |
M22AHR | 2010 | AMS HiRes 0.35 opto | 10-15-20 | 18.4/20.7 | 4M | 73k digital + 4,6k analog | proto numerique EUDET | (mi22AHR) |
M23 Phase1&2 (1)(2) | 2008 | AMS 0.35 opto | 14 | 30 | 4M | 410k digital | real scale Digital chip | manual |
M24 (1)(2) | 2008 | XFAB 0.35 | ~14 | 20-30 | 4M | 13k | exploration techno | (1) |
M25 (1) | 2008 | XFAB 0.6 PIN | ~no high res. | 20/30/40 | 3M | 4.8k | exploration techno | (1) |
M26 (1) mi26AHR | 2008 2009 | AMS0.35opto AMS0.35 opto HiRes | std14 HR10/15/20 | 18.4 | 4M | 660k Digital | chip final EUDET with suze | manual |
M27 (1) | 2010 | XFAB 0.18 | 20 | 5M | 16k | exploration techno | (1) | |
M28 Ultimate (1)(2) | 2011 | AMS 0.35 opto HiRes | 15 &20 | 20.7 | 4M | 890k Digital | STAR chip final | manual |
M29 (1)(2) | 2011 | AMS 0.35 opto HiRes | 15 &20 | 16*64 & 16*80 | 4M | 26k | Elongated pixel | (1) |
M30 (1) (2) | 2011 | AMS 0.35 opto HiRes | 15 &20 | 16² & 16*64 | 4M | 40k digital | Square & Elongated pixel | (1) |
M31 (1) (2) | 2011 | AMS 0.35 opto HiRes | 15 &20 | 35 | 4M | 3k digital | ADC 4 bit | (1) |
M32 (1)(2) M32bis | 2011 2012 | Tower 0.18 HiRes | HiRes18 / std | 20 | 4M | 40k | exploration techno | (Mi32)(Mi32bis) |
M32Ter | 2012 | Tower 0.18 HiRes | HiRes18 /std | 20 | 6M | 40k | exploration techno | (Mi32ter) |
M32FEE(1) M32N1/N2 | 2013 | Tower 0.18 HiRes | HiRes18 | 20 | 6M | 40k | exploration techno | (Mi32FEE)(Mi32N1/2) |
M34(1) | 2013 | Tower 0.18 HiRes | HiRes18 | 22µm variation 33µm variation | 6M | 40k | exploration techno | (Mi34) |
Chip | Year | Process (µm) | Epi.(µm) | Pitch (µm) | Metal | Pixels | Peculiar | Documents |
---|---|---|---|---|---|---|---|---|
SUC 1 | 2003 | AMIS 0.35 | 4.2 | 25-35 | 5M | 4k | rad.tol. struct. (SUCIMA project) | |
SUC 2 | 2003 | AMS 0.35 | no | 40 | 3M | 4k | low dop. Substrate (SUCIMA project) | |
SUC 3 | 2003 | AMIS 0.35 | 4.2 | 20 | 5M | 8k | rad.tol. struct. (SUCIMA project) | |
SUC 4 Mtera | 2004 | AMS 0.35 | 14 | 150 | 3M | 12.5k | hadrontherapy/beam monitor. (SUCIMA) | (1) |
SUC 5 | 2004 | AMIS 0.35 | 4.2 | 30 | 5M | 65k | proto. Dosimetry (SUCIMA project) |