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Vertex detector
Dernière mise à jour : mercredi 11 janvier 2006, par Auguste BESSON
Please refer also to Publications & Presentations
Detector geometry
- Main features of the detector concept based on CMOS sensors. For each layer, the table indicates the radius, the pixel pitch, the read-out time, the ladder width, the number of ladders, the number of pixels, the instantaneous and average power dissipation.
Layer |
Pitch |
time r.o. |
N ladders |
N pixels |
Pdiss. (instantaneous) |
Pdiss. (mean) |
L1 |
20 µm |
25 µs |
20 |
25M |
< 100 W |
< 5 W |
L2 |
25 µm |
50 µs |
26 |
65M |
< 130 W |
< 7 W |
L3 |
30 µm |
200 µs |
24 |
75M |
< 100 W |
< 5 W |
L4 |
35 µm |
200 µs |
32 |
70M |
< 110 W |
< 6 W |
L5 |
40 µm |
200 µs |
40 |
70M |
< 125 W |
< 6 W |
total |
|
|
142 |
305M |
< 565 W |
<29 W |
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- D.Grandjean ; Géométrie réaliste et flexible d’un détecteur de vertex avec MOKKA
Transparencies presented at SOCLE, IPN Lyon(January 2006) - A.Besson ; A Vertex Detector for the ILC based on CMOS Sensors (PPT) 10th European Symposium on Semiconductor Detectors conference. (Wildbad Kreuth, 2005)
Impact parameter resolution studies
-
- G.Gaycken ; Impact parameter resolution studies ; ECFA, 1-4 September 2004 (Durham) (pdf)
- G.Gaycken / D.Grandjean ; Impact parameter resolution studies with Brahms (PDF) (Montpellier ECFA Workshop, 2004)